Emission properties of amorphous silicon and carbon films
- 28 February 1991
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 48-49, IN5-635
- https://doi.org/10.1016/0022-2313(91)90208-d
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Photoluminescence peak shift with increasing temperature and excitation intensity in a-Si:HSolid State Communications, 1989
- Thermalization of photoexcited carriers in a-Si:HJournal of Luminescence, 1988
- Thermalization and radiative recombination of photo-excited carriers in a-Si: HPhilosophical Magazine Part B, 1987
- Infrared spectra of amorphous SiNx:H filmsJournal of Non-Crystalline Solids, 1985
- Phonon interactions in the tail states of-Si:HPhysical Review B, 1983
- Photoluminescence in Amorphous C: H Films Prepared by Glow Discharge Decomposition of CH4 or C2H6Japanese Journal of Applied Physics, 1983
- Recombination in-Si:H: Auger effects and nongeminate recombinationPhysical Review B, 1981
- Non-radiative recombination at valence-alternation pairsJournal of Physics C: Solid State Physics, 1980