Ion implantation—an introduction
- 1 May 1986
- journal article
- research article
- Published by Taylor & Francis in Contemporary Physics
- Vol. 27 (3) , 241-256
- https://doi.org/10.1080/00107518608211010
Abstract
Ion implantation is a widely used technique with a literature that covers semiconductor production, surface treatments of steels, corrosion resistance, catalysis and integrated optics. This brief introduction outlines advantages of the technique, some aspects of the underlying physics and examples of current applications. Ion implantation is already an essential part of semiconductor technology while in many other areas it is still at an early stage of development. The future scope of the subject is discussed.Keywords
This publication has 36 references indexed in Scilit:
- Ion implantation in LiF to form F and F2centresJournal of Physics C: Solid State Physics, 1986
- Computer simulation of two-component target sputteringApplied Physics A, 1985
- Microhardness and nitrogen profiles in ion implanted tungsten carbide and steelsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Adhesive and abrasive wear mechanisms in ion implanted metalsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Adhesive, abrasive and oxidative wear in ion-implanted metalsMaterials Science and Engineering, 1985
- Sputtering studies with the Monte Carlo Program TRIM.SPApplied Physics A, 1984
- The alteration of oxidation and related properties of metals by ion implantationNuclear Instruments and Methods, 1981
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- The formation of waveguides and modulators in LiNbO3 by ion implantationJournal of Applied Physics, 1979
- Recoil contribution to ion-implantation energy-deposition distributionsJournal of Applied Physics, 1975