High-efficiency anomalous mode oscillation from silicon IMPATT diodes at 6 GHz
- 1 January 1969
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XII, 86-87
- https://doi.org/10.1109/isscc.1969.1154754
Abstract
Pulsed operation of silicon punch-through avalanche diodes has produced oscillations with efficiencies exceeding 30% at 2-3 GHz, and 17% at 6 GHz.Keywords
This publication has 2 references indexed in Scilit:
- High-efficiency oscillations in germanium avalanche diodes below the transit-time frequencyProceedings of the IEEE, 1968
- High-power, high-efficiency silicon avalanche diodes at ultra high frequenciesProceedings of the IEEE, 1967