Optical control of resonant tunneling diode monolithically integrated with PIN photodiode
- 1 May 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 8 (5) , 641-643
- https://doi.org/10.1109/68.491565
Abstract
Optical control of the resonant tunneling characteristics of an integrated optoelectronic device with a monolithic integrated double-barrier/PIN structure is studied. Optical switching of the bistable resonant tunneling state and optical injection locking of a resonant tunneling oscillator at 1 GHz are demonstrated.Keywords
This publication has 11 references indexed in Scilit:
- Optically switched resonant tunneling diodesApplied Physics Letters, 1995
- Monolithic optoelectronic transistor: A new smart-pixel deviceApplied Physics Letters, 1993
- 1.7-ps, microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodesIEEE Electron Device Letters, 1993
- Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applicationsIEEE Transactions on Electron Devices, 1993
- Resonant tunnelling diode oscillator as an alternative LO for SIS receiver applicationsElectronics Letters, 1993
- Phase locking between light pulses and a resonant tunneling diode oscillatorApplied Physics Letters, 1993
- Nine-state resonant tunneling diode memoryIEEE Electron Device Letters, 1992
- High-contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diodeApplied Physics Letters, 1991
- Optical switching of a new middle trace in an optically controlled parallel resonant tunneling device−Observation and modelingApplied Physics Letters, 1991
- Quantum‐well and quantum‐barrier diodes for generating submillimeter wave powerMicrowave and Optical Technology Letters, 1991