Magnetoresistance of the 2-D impurity band in silicon inversion layers
- 31 March 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 117-118, 655-657
- https://doi.org/10.1016/0378-4363(83)90616-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Impurity bands in inversion layersPhilosophical Magazine Part B, 1980
- The effect of stress and strong magnetic fields on the shallow impurities in semiconductors and the piezoresistance and magnetoresistance for hopping conductionPhilosophical Magazine Part B, 1980
- Analysis of hopping conduction in impurity bands in inversion layersPhilosophical Magazine Part B, 1978
- Oxide-Charge-Induced Impurity Level in Silicon Inversion LayersPhysical Review Letters, 1975
- High temperature 'variable range hopping' conductivity in silicon inversion layersJournal of Physics C: Solid State Physics, 1975
- Conduction in glasses containing transition metal ionsJournal of Non-Crystalline Solids, 1968