IR detection by depletion of trapped charge in localized impurity states of an extrinsic semiconductor
- 1 February 1984
- journal article
- Published by Springer Nature in International Journal of Infrared and Millimeter Waves
- Vol. 5 (2) , 197-205
- https://doi.org/10.1007/bf01417650
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Quantum-mechanical estimates of the speed of field ionization of shallow impurity levelsApplied Physics Letters, 1980
- Low-temperature field ionization of localized impurity levels in semiconductorsApplied Physics Letters, 1979
- New Charge-Storage Effect in SiliconDiodes at Cryogenic TemperaturesPhysical Review Letters, 1978