Picosecond large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs modulated doped field effect transistor

6 September 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 61 (10) , 1187-1189
https://doi.org/10.1063/1.107642

Abstract

We present the first comprehensive study of the large‐signal switching characteristics of an AlGaAs/InGaAs modulation‐doped field‐effect transistor on a picosecond time scale. Electro‐optic sampling is used to measure drain voltage response to a steplike gate input with a 2.8 ps rise time, at various dc biases. A large‐signal switching time of 6.2 ps is obtained. Features deleterious to high‐frequency device operation are observed, related to equivalent circuit parameters, and reduced by appropriate choice of operating point.

Keywords

This publication has 13 references indexed in Scilit:

GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling
IEEE Transactions on Microwave Theory and Techniques, 1991
CH4/H2 reactive ion etching for gate recessing of pseudomorphic modulation doped field effect transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
Terahertz attenuation and dispersion characteristics of coplanar transmission lines
IEEE Transactions on Microwave Theory and Techniques, 1991
Ultrafast coplanar air-transmission lines
Applied Physics Letters, 1990
A mixer based electro-optic sampling system for submillivolt signal detection
Review of Scientific Instruments, 1990
Subpicosecond electrical pulse generation using photoconductive switches with long carrier lifetimes
Applied Physics Letters, 1989
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs
IEEE Transactions on Electron Devices, 1989
Large-signal model of picosecond FETs and measurement of the step response
IEEE Transactions on Microwave Theory and Techniques, 1989
Design considerations for a femtosecond pulse laser balancing self phase modulation, group velocity dispersion, saturable absorption, and saturable gain
IEEE Journal of Quantum Electronics, 1986
A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_1-xAs Heterojunctions
Japanese Journal of Applied Physics, 1980