Effect of emitter recombinations on the open circuit voltage decay of a junction diode

This publication has 22 references indexed in Scilit:

• A new solution for minority-carrier injection into the emitter of a bipolar transistor
  IEEE Transactions on Electron Devices, 1980
• Measurement of heavy doping parameters in silicon by electron-beam-induced current
  IEEE Transactions on Electron Devices, 1980
• Measurement of the minority-carrier transport parameters in heavily doped silicon
  IEEE Transactions on Electron Devices, 1980
• Heavy doping effects in p-n-p bipolar transistors
  IEEE Transactions on Electron Devices, 1980
• The importance of surface recombination and energy-bandgap arrowing in p-n-junction silicon solar cells
  IEEE Transactions on Electron Devices, 1979
• Bandgap narrowing in moderately to heavily doped silicon
  IEEE Transactions on Electron Devices, 1979
• Diffusion length and lifetime determination in p-n junction solar cells and diodes by forward-biased capacitance measurements
  IEEE Transactions on Electron Devices, 1978
• A method for determining the emitter and base lifetimes in p-n junction diodes
  IEEE Transactions on Electron Devices, 1977
• A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices
  IEEE Transactions on Electron Devices, 1977
• Normal modes of semiconductor p-n–junction devices for material-parameter determination
  Journal of Applied Physics, 1976