Preparation and properties of tin-doped indium oxide thin films by thermal decomposition of organometallic compounds
- 31 July 1986
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 21 (7) , 803-806
- https://doi.org/10.1016/0025-5408(86)90165-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Electrical and optical properties of thin In2O3:Sn and SnO2:SbIn2O3:Sn films obtained by the hydrolysis methodThin Solid Films, 1984
- Tin-doped In2O3 films deposited by r.f. sputteringThin Solid Films, 1983
- Transparent conductive films of In2O3:Sn prepared by the pyrolysis methodThin Solid Films, 1982
- Electrical and optical properties of In2O3: Sn films prepared by activated reactive evaporationThin Solid Films, 1980
- Electrical properties of vacuum-deposited indium oxide and indium tin oxide filmsThin Solid Films, 1980
- Life stability of transparent semiconducting oxide films deposited onto cold substratesThin Solid Films, 1978
- Properties of Sn-Doped Indium Oxide Prepared by High Rate and Low Temperature RF SputteringJapanese Journal of Applied Physics, 1978
- Formation Process of Antimony-Doped Stannic Oxide Film from Organometallic Compounds by Thermal DecompositionNIPPON KAGAKU KAISHI, 1972