Raman scattering in long-period superlattices of GaAs, AlAs, andAs layers
- 15 March 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (8) , 5221-5226
- https://doi.org/10.1103/physrevb.41.5221
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Phonon modes and Raman scattering in GaAs/AsPhysical Review B, 1987
- Influence of the supercell structure on the folded acoustical Raman line intensities in superlatticesPhysical Review B, 1987
- Structural Identification of SiC Polytypes by Raman Scattering: 27R and 33R PolytypesJournal of the Physics Society Japan, 1987
- Phonons in semiconductor superlatticesIEEE Journal of Quantum Electronics, 1986
- Relative Raman intensities of the folded modes in SiC polytypesPhysical Review B, 1986
- Raman scattering intensity of the long-period polytypes ofPhysical Review B, 1985
- Theory of inelastic light scattering off acoustic modes in superlatticesJournal of Physics C: Solid State Physics, 1985
- Folded acoustic and quantized optic phonons in (GaAl)As superlatticesPhysical Review B, 1985
- "Folded" optical phonons insuperlatticesPhysical Review B, 1984
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAsPhysical Review B, 1978