MOMBE growth of high quality GaInAsP (λg = 1.05 μm) for waveguide applications
- 1 July 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 164 (1-4) , 449-453
- https://doi.org/10.1016/0022-0248(95)01059-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Effect of surface orientation on GaInAsP material composition in MOMBE (CBE)Journal of Crystal Growth, 1992
- Growth of highly uniform InP/GaInAs/GaInAsP heterostructures by MOMBE for device integrationJournal of Crystal Growth, 1992
- Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloysJournal of Crystal Growth, 1991
- Growth mechanism studies in CBE/MOMBEJournal of Crystal Growth, 1991
- Extremely low loss InP/GaInAsP rib waveguidesElectronics Letters, 1989
- Intermixing Process of InGaAs/InP MQW Grown by Metalorganic Molecular Beam Epitaxy at Thermal AnnealingJapanese Journal of Applied Physics, 1987
- Growth of high-quality GaxIn1−xAsyP1−y by chemical beam epitaxyApplied Physics Letters, 1987
- Spectral dependence of propagation loss in InP/InGaAsP antiresonant reflecting optical waveguides grown by chemical beam epitaxyApplied Physics Letters, 1987