p-Type ZnO Thin Films Formed by CVD Reaction of Diethylzinc and NO Gas
- 1 January 2003
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 6 (4) , C56-C58
- https://doi.org/10.1149/1.1554292
Abstract
We discuss the use of nitric oxide (NO) gas to dope ZnO p-type films, fabricated using metallorganic chemical vapor deposition (CVD) reaction of a Zn metallorganic precursor and NO gas. In this reaction, NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. Auger electron spectroscopy analysis indicated that, under Zn-rich condition, the N concentration in the film is readily detectable, with the highest concentration being atom %. For concentrations greater than 2 atom %, the films are p-type. The carrier concentration varies from to and the mobility is approximately The minimum film resistivity achieved is © 2003 The Electrochemical Society. All rights reserved.Keywords
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