A device model for metal-semiconductor-metal photodetectors and its applications to optoelectronic integrated circuit simulation
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (9) , 1964-1968
- https://doi.org/10.1109/16.57157
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Gb/s fiber optic link adapter chip setPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Fullwave analysis of picosecond photoconductive switchesIEEE Journal of Quantum Electronics, 1990
- Picosecond Optoelectronic Switches Using Composite Electronic MaterialsPublished by Springer Nature ,1987
- Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layerIEEE Transactions on Electron Devices, 1986
- Effect of Auger recombination on laser operation in Ga1−xAlxAsJournal of Applied Physics, 1985
- Buried p-layer SAINT for very high-speed GaAs LSI's with submicrometer gate lengthIEEE Transactions on Electron Devices, 1985
- Picosecond Photoconductors: Physical Properties and ApplicationsPublished by Elsevier ,1984
- Flux-flow type Josephson oscillator for millimeter and submillimeter wave regionJournal of Applied Physics, 1983
- Microwave Circuit Models of Semiconductor Injection LasersIEEE Transactions on Microwave Theory and Techniques, 1983
- Circuit model of double-heterojunction laser below thresholdIEE Proceedings I Solid State and Electron Devices, 1981