Strain determination in III-V compound heterostructure strained layers by comparison of experimental and simulated electron diffraction contrast in 90° wedges
- 1 April 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Letters
- Vol. 63 (4) , 241-244
- https://doi.org/10.1080/09500839108205997
Abstract
Computer images of electron diffraction contrast from 90° wedge specimens containing strained III-V compound heterostructure layers are compared with experimental TEM images. The image contrast in the wedge is strongly affected by strain relaxation near the edge and allows unambiguous derivation of the bulk strain. The strain distributions used to simulate diffraction contrast are obtained by finite-element calculations. This new technique combines high spatial resolution with a high sensitivity (∼0.01%) for changes in the strain value. It also has the advantage of speed in the sample preparation.Keywords
This publication has 2 references indexed in Scilit:
- Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wellsApplied Physics Letters, 1989
- Effects of strain on the electron diffraction contrast at III-V compound heterostructure interfacesPhilosophical Magazine A, 1989