Phonon-assisted Auger recombination in a quasi-two-dimensional structure semiconductor

A theory is presented of the phonon-assisted Auger recombination of the excess carriers which are confined in a quasi-two-dimensional structure laser. The theory, which is based on the Green's-function formalism, is applied to a quantum well of ${\mathrm{In}}_{0.72}$ ${\mathrm{Ga}}_{0.28}$ ${\mathrm{As}}_{0.6}$ ${\mathrm{P}}_{0.4}$. It is shown that the Auger recombination is strongly enhanced by phonon assistance. The Auger recombination in the quasi-two-dimensional structure is also compared with that in the three-dimensional structure.