Preparation of PbTiO3 Thin Films by Reactive Ionized Cluster Beam Deposition
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9S)
- https://doi.org/10.1143/jjap.31.2975
Abstract
PbTiO3 thin films were prepared by reactive ionized cluster beam (R-ICB) deposition on highly (100)-oriented Pt films formed on SiO2/Si substrates. PbTiO3 thin films consisting of c-axis- and a-axis-oriented crystallines with perovskite structure were obtained at a comparatively low substrate temperature of 430°C. We think tensile stress exists in PbTiO3 thin films, and it may be the cause of a-axis orientation. It is considered that fabricating high-density PbTiO3 thin films by applying an acceleration voltage decreases the tensile stress in the film and is advantageous for preparation of c-axis-oriented PbTiO3 thin films.Keywords
This publication has 3 references indexed in Scilit:
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- Preparation of epitaxial ABO3 perovskite-type oxide thin films on a (100)MgAl2O4/Si substrateJournal of Applied Physics, 1989
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