Ionized cluster beam technique
- 31 March 1986
- Vol. 36 (1-3) , 27-31
- https://doi.org/10.1016/0042-207x(86)90264-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Summary Abstract: Principles and application of ionized cluster beam depositionJournal of Vacuum Science & Technology A, 1985
- Characteristics Of SiO 2 Films Deposited By Ionized Nozzle-Beam TechniquePublished by SPIE-Intl Soc Optical Eng ,1985
- Epitaxial growth of Al on Si(111) and Si(100) by ionized-cluster beamJournal of Applied Physics, 1984
- Ion–surface interactions during thin film depositionJournal of Vacuum Science & Technology A, 1984
- SiO2 films deposited on Si by an ionized cluster beamJournal of Vacuum Science & Technology B, 1983
- Role of ions in ion-based film formationThin Solid Films, 1982
- Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formationThin Solid Films, 1982
- Vaporized-metal cluster formation and ionized-cluster beam deposition and epitaxyThin Solid Films, 1981
- Cadmium telluride layer deposition using the ionized cluster beam techniqueJournal of Crystal Growth, 1977
- An evaluation of metal and semiconductor films formed by ionized-cluster beam depositionThin Solid Films, 1976