Time-resolved temperature measurement of picosecond laser irradiated silicon
- 15 July 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (2) , 168-170
- https://doi.org/10.1063/1.94268
Abstract
Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100-nm thickness.Keywords
This publication has 3 references indexed in Scilit:
- Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in siliconApplied Physics Letters, 1982
- Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperaturesApplied Physics Letters, 1982
- Measurement of Lattice Temperature of Silicon during Pulsed Laser AnnealingPhysical Review Letters, 1981