Charge trap dynamics in a SiO2 layer on Si by scanning capacitance microscopy
- 24 March 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (13) , 1815-1817
- https://doi.org/10.1063/1.123095
Abstract
Trapped electrons and holes, and their dynamics, were visualized from spatially resolved capacitance–voltage curves and images using scanning capacitance microscopy. A trapped charge of C, localized within 2 μm diam circular test structures, was imaged. The detrapping process of the trapped electrons can be explained with a quantum-mechanical tunneling model.
Keywords
This publication has 14 references indexed in Scilit:
- Investigation of oxide charge trapping and detrapping in a MOSFET by using a GIDL current techniqueIEEE Transactions on Electron Devices, 1998
- Nanometer-Scale Creation and Characterization of Trapped Charge in SiFilms Using Ballistic Electron Emission MicroscopyPhysical Review Letters, 1996
- Direct comparison of cross-sectional scanning capacitance microscope dopant profile and vertical secondary ion-mass spectroscopy profileJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- The charging and discharging of high-voltage stress-generated traps in thin silicon oxideIEEE Transactions on Electron Devices, 1996
- Off-state instabilities in thermally nitrided-oxide n-MOSFETsIEEE Transactions on Electron Devices, 1993
- Observation of single charge carriers by force microscopyPhysical Review Letters, 1990
- Relaxable damage in hot-carrier stressing of n-MOS transistors-oxide traps in the near interfacial region of the gate oxideIEEE Transactions on Electron Devices, 1990
- Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopyApplied Physics Letters, 1989
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983