Electronic Spin of the Ga Vacancy in GaP
- 25 April 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 50 (17) , 1281-1284
- https://doi.org/10.1103/physrevlett.50.1281
Abstract
EPR experiments with uniaxial stress on the Ga vacancy in GaP reveal that its spin is . The spectrum splits linearly with stress into three components with a coefficient at 20 K. The high spin demonstrates the importance of the exchange interaction for this vacancy.
Keywords
This publication has 13 references indexed in Scilit:
- Confirmation of the EPR identification of in -type Cr-doped GaAs by means of applied uniaxial stressPhysical Review B, 1982
- Electronic structure of neutral and negatively charged gallium vacancies in GaPJournal of Physics C: Solid State Physics, 1982
- Theory of intrinsic defects in III–V semiconductorsJournal of Luminescence, 1981
- Identification and Properties of Defects in GaPPhysical Review Letters, 1981
- Self-consistent calculations of the electronic structure for ideal Ga and As vacancies in GaAsPhysical Review B, 1981
- Electron paramagnetic resonance of electron-irradiated GaPPhysical Review B, 1981
- Trends in the electronic properties of substitutionaltransition-metal impurities in GaAsPhysical Review B, 1980
- Identification of the Isolated Ga Vacancy in Electron-Irradiated GaP through EPRPhysical Review Letters, 1978
- Localized defects in III-V semiconductorsPhysical Review B, 1976
- Effect of Uniaxial Stresses on the Paramagnetic Spectra ofandin MgOPhysical Review B, 1964