Kinetics of the Incorporation of Dopants into Epitaxial CVD Silicon
- 1 January 1982
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 17 (10) , 1217-1225
- https://doi.org/10.1002/crat.2170171007
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Computer Simulation in Silicon EpitaxyJournal of the Electrochemical Society, 1981
- Transient and Steady‐State Response of the Dopant System of a Silicon Epitaxial Reactor: Transfer‐Function ApproachJournal of the Electrochemical Society, 1978
- Doping of epitaxial siliconJournal of Crystal Growth, 1970