Direct electro-optic sampling of a GaAs integrated circuit using a gain-switched InGaAsP injection laser
- 25 September 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (20) , 1068-1069
- https://doi.org/10.1049/el:19860732
Abstract
We demonstrate an electro-optic sampling system based on a gain-switched InGaAsP injection laser. The system has a temporal resolution of 18ps and is used for noninvasive probing of waveform internal to a GaAs monolithic integrated circuit operating at 2.4GHz.Keywords
This publication has 1 reference indexed in Scilit:
- Ultra High Speed Integrated Circuits with Selectively Doped Heterostructure TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984