Numerical evaluation of amorphous silicon p-i-n solar cell degradation
- 7 June 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (23) , 2959-2961
- https://doi.org/10.1063/1.109156
Abstract
Through numerical simulation of several hypotheses concerning the degradation of hydrogenated amorphous silicon p‐i‐n solar cells under illumination, we have established a set of ‘‘degradation rules.’’ Comparing the measured white‐light characteristic as a function of intensity, the internal collection efficiency as a function of wavelength, and the i‐layer thickness dependence of the conversion efficiency with these rules allows one to distinguish between the degradation of the i layer, the buffer layer, and the buffer/i‐interface layer.Keywords
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