Critical channeling angles of low energy ions in silicon
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 29 (2) , 117-119
- https://doi.org/10.1080/00337577608233496
Abstract
Critical channeling angles of H, He, C and Ne ions in silicon single crystals have been measured in the energy range from 15–60 keV. The results well agree with theoretical critical channeling angles in the low energy regime following a dependence of ψ ∼ E −¼.Keywords
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