Redistribution of implanted H in annealings of n-type GaAs
- 1 September 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (5) , 2334-2336
- https://doi.org/10.1063/1.341664
Abstract
Depth profiles of 60‐ and 100‐keV protons implanted at room temperature to fluences of 1016 and 1017 H+ ions/cm2 in Si‐doped n‐type GaAs have been obtained using ion beam techniques. The profiles of H have been measured as a function of annealing temperature up to 820 K. The redistribution of implanted H is observed to depend on the migration of implantation‐induced defects. The migration of H‐atom‐defect complexes is approximated by an Arrhenius process with an activation energy of 2.16±0.15 eV and a preexponential factor of 2×105 cm2/s.This publication has 18 references indexed in Scilit:
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