Pulse height defect of energetic heavy ions in ion-implanted Si detectors
- 1 March 1998
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 405 (1) , 39-44
- https://doi.org/10.1016/s0168-9002(97)01174-1
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Direct Experimental Evidence of Nonequilibrium Energy Sharing in Dissipative CollisionsPhysical Review Letters, 1997
- Response of ion implanted silicon detectors to fully stopped Au ions of 11.5 A MeV impinging along crystallographic directionsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Analysis of the sequential fission observed in collisions of100Mo +100Mo and120Sn +120Sn around 20 A MeVThe European Physical Journal A, 1995
- Evidence for a nonequilibrated dinuclear system in dissipative collisions at 19 MeV/nucleonPhysical Review Letters, 1991
- Results on two-, three-, and four-body events from the100Mo+100Mo and120Sn+120Sn collisions aroundE/A=20 MeVThe European Physical Journal A, 1991
- Range and stopping-power tables for 2.5–500 MeV/nucleon heavy ions in solidsAtomic Data and Nuclear Data Tables, 1990
- Systematic measurements of pulse height defects for heavy ions in surface-barrier detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- A new method for calibrating the pulse-height defect in solid state detectorsNuclear Instruments and Methods, 1978
- A calibration procedure for the response of silicon surface-barrier detectors to heavy ionsNuclear Instruments and Methods, 1974
- Pulse-height defects for heavy ions in a silicon surface-barrier detectorNuclear Instruments and Methods, 1971