Photorefractive multiple quantum well device using quantum dots as trapping zones

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Abstract
Results on the optical properties of a GaInAs/GaInAsP multiple quantum well photorefractive device operating at 1.55 μm in the longitudinal quantum-confined Stark geometry are reported. Self-assembling quantum dots (SAQDs) have been used in this device to trap the photocarriers in two regions out of the multiple quantum well. An efficient screening of applied electric field and the possibility to reduce the lateral diffusion of carriers with SAQDs are demonstrated. Finally, degenerate four-wave mixing measurements were performed in this device.