Fabrication of Less Than a 10 nm Wide Polycrystalline Silicon Nano Wire
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S) , 905-908
- https://doi.org/10.1143/jjap.33.905
Abstract
This paper reports a fabrication technology of polycrystalline silicon (poly-Si) “slit nano wire”, with dimensions of less than 10 nm. The processing procedures consist of a 100 nm electron beam lithography, precision dry etching, conformable deposition of silicon dioxide layer, slit etching, conformable deposition of doped amorphous silicon (a-Si) layer and etch back. The resulting poly-Si “slit nano wire” layer measures less than 10 nm in width as ascertained by a cross section transmission electron microscope (X-TEM). A possible application of the “slit nano wire” to a future optoelectronic devices is also discussed.Keywords
This publication has 5 references indexed in Scilit:
- Oxidation of sub-50 nm Si columns for light emission studyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- The Future of Solid-State ElectronicsPhysics Today, 1992
- Role of Hydrogenated Surface in the Photoluminescence of Porous SiliconMRS Proceedings, 1992
- Fabrication of sub-100-nm linewidth periodic structures for study of quantum effects from interference and confinement in Si inversion layersJournal of Vacuum Science & Technology B, 1986
- Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline SiliconJournal of the Electrochemical Society, 1978