Experimental study of the effect of junction curvature on breakdown voltage in Si
- 31 March 1967
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 10 (3) , 177-182
- https://doi.org/10.1016/0038-1101(67)90071-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effect of junction curvature on breakdown voltage in semiconductorsSolid-State Electronics, 1966
- AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p-n JUNCTIONS IN Ge, Si, GaAs, AND GaPApplied Physics Letters, 1966
- Breakdown voltages of germanium plane-cylindrical junctionsIEEE Transactions on Electron Devices, 1965