Verify: key to the stable single-electron-memory operation
- 22 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 171-174
- https://doi.org/10.1109/iedm.1997.650301
Abstract
The impact of verify, which has been used in flash memory but has not been associated with single-electron memory, is analyzed and experimentally demonstrated. Using verify overcomes many obstacles to large-scale integration, including background charge variation, the inherent stochastic behavior of single-electron dynamics, and nanoscale structure variation, especially in naturally formed nanostructures, such as nano-silicon. A write/erase endurance of 10/sup 7/ cycles was demonstrated with nano-Si memory devices.Keywords
This publication has 5 references indexed in Scilit:
- Impact of Coulomb blockade on low-charge limit of memory devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Volatile and non-volatile memories in silicon with nano-crystal storagePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994
- An 80-ns 1-Mb flash memory with on-chip erase/erase-verify controllerIEEE Journal of Solid-State Circuits, 1990
- An in-system reprogrammable 32 K*8 CMOS flash memoryIEEE Journal of Solid-State Circuits, 1988