Turn-on process in 4H-SiC thyristors
- 1 July 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (7) , 1177-1179
- https://doi.org/10.1109/16.595949
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Multistreamer regime of GaAs thyristor switchingIEEE Transactions on Electron Devices, 1994
- GaAs-based opto-thyristor for pulsed power applicationsIEEE Transactions on Electron Devices, 1990
- First SiC dynistorElectronics Letters, 1988
- Investigation of the effect of nonlinear physical phenomena on charge carrier transport in semiconductor devicesSolid-State Electronics, 1987
- The forward characteristic of silicon power rectifiers at high current densitiesSolid-State Electronics, 1968