A simple and accurate method to measure the threshold voltage of an enhancement-mode MOSFET
- 1 February 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (2) , 346-348
- https://doi.org/10.1109/t-ed.1982.20707
Abstract
A new, simple method to measure the VTof an enhancement-mode MOSFET has been developed based on the analytical model of the subthreshold current. VTis determined to be the gate voltage at which the IDSreaches the constant threshold current, and this method is accurate over a wide range of device dimensions, bias conditions, and operating temperatures.Keywords
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