Silicon carbide FETs for high temperature nuclear environments
Open Access
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (3) , 1642-1648
- https://doi.org/10.1109/23.507163
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Recent developments in SiC single-crystal electronicsSemiconductor Science and Technology, 1992
- Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbideProceedings of the IEEE, 1991