Reaction and growth of Yb/Hg1−xCdxTe(110) interfaces

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Abstract
Detailed synchrotron radiation photoemission studies of Yb/Hg1−xCdxTe junctions as a function of Yb coverage were performed at room temperature. Photoemission from physisorbed xenon after cooling the sample to 35 K was also used to examine the local overlayer work function and the development of interface morphology. For Yb coverages less than 6 Å, the data provide evidence for the lateral growth of islands consisting of Yb‐Te reaction products involving divalent Yb, and an associated Hg depletion within an 18‐Å‐thick near‐surface layer. Upon island coalescence at an Yb coverage of 6 Å, the formation of a metallic Yb‐rich layer at the surface is observed. This layer traps Hg atoms diffusing across the interface through the formation of an Yb‐Hg alloy, and is responsible for the nonmonotonic behavior of the Hg interface concentration as a function of Yb coverage.

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