The complex capacitance of silicon inversion layers in strong inversion as a function of frequency and resistance
- 31 March 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 49 (9) , 859-861
- https://doi.org/10.1016/0038-1098(84)90439-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistorsPhysical Review B, 1974
- Capacitance Observations of Landau Levels in Surface QuantizationPhysical Review Letters, 1968