Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas
- 10 May 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (19) , 2353-2355
- https://doi.org/10.1063/1.109416
Abstract
The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low‐pressure environment. About 0.4 atomic‐layer epitaxy per flash‐lamp light shot was observed on Si(100) at a substrate temperature of 385 °C and at SiH4 partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pressure and shot‐to‐shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.Keywords
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