Implantation of 5keV deuterium in BeO
- 1 January 1980
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 48 (1-4) , 221-224
- https://doi.org/10.1080/00337578008209257
Abstract
The trapping of 5 keV deuterium in ∼ 165 and ∼ 4000 nm thick BeO films grown by thermal oxidation on Be substrates was investigated at different temperatures using the D(3He,H)4He nuclear reaction. The ratio of implanted D to BeO molecules obtained at saturation is 0.24 to 0.34. The D migrates from its end of range location and distributes itself uniformly in the BeO film. With increasing implant temperature the BeO layer flakes from the Be substrate. The distribution of D in BeO films at high concentrations is not consistent with diffusivity measurements at low concentrations of T in BeO.Keywords
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