The feasibility of CoSi/sub 2/, TiW and TiW (N) as local interconnection in a self-aligned CoSi/sub 2/ technology
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 149-157
- https://doi.org/10.1109/vmic.1988.14187
Abstract
The feasibility of several materials for use in local interconnection technology in combination with the self-aligned CoSi/sub 2/ process is evaluated. In the self-aligned CoSi/sub 2/ process, CoSi/sub 2/ straps from Co/a-Si (1:2) bilayer reactions are formed from both substrate Si and the a-Si layer, resulting in an a-Si surface layer. Thermal treatments of Si-CoSi/sub 2/-TiW (10:90) revealed a net Si transport in the TiW top layer at elevated temperatures (750 degrees C). Formation of (Ti/sub 0.24/W/sub 0.76/)Si/sub 2/ and WSi/sub 2/ phases, CoSi/sub 2/ phase integrity, and a net movement of the CoSi/sub 2/ layer into the Si substrate have been observed at temperatures above 750 degrees C. The most viable strap material for a CoSi/sub 2/ self-aligned silicide technology is a reactively sputtered TiW(N) layer because of high-temperature stability and compatibility with present IC processing.Keywords
This publication has 2 references indexed in Scilit:
- A self-aligned CoSi2interconnection and contact technology for VLSI applicationsIEEE Transactions on Electron Devices, 1987
- Titanium nitride local interconnect technology for VLSIIEEE Transactions on Electron Devices, 1987