Circuit simulation models for the high electron mobility
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 405-408
- https://doi.org/10.1109/iscas.1988.14950
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Circuit simulation models for the high electron mobility transistorIEEE Transactions on Electron Devices, 1986
- Performance of heterostructure FET's in LSIIEEE Transactions on Electron Devices, 1986
- Simulation and Design Analysis of (A1Ga)As/GaAs MODFET Integrated CircuitsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1986
- Current—Voltage and capacitance—Voltage characteristics of modulation-doped field-effect transistorsIEEE Transactions on Electron Devices, 1983
- An Investigation of the Charge Conservation Problem for MOSFET Circuit SimulationIEEE Journal of Solid-State Circuits, 1983
- Metal-(n) AlGaAs-GaAs two-dimensional electron gas FETIEEE Transactions on Electron Devices, 1982
- A MESFET Variable-Capacitance Model for GaAs Integrated Circuit SimulationIEEE Transactions on Microwave Theory and Techniques, 1982
- Transient analysis of MOS transistorsIEEE Transactions on Electron Devices, 1980