GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 39-42
- https://doi.org/10.1016/0022-0248(91)90943-y
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electrical and optical characterization of gas source and solid source MBE low temperature buffersJournal of Crystal Growth, 1991
- Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperaturesApplied Physics Letters, 1990
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1989
- Picosecond GaAs-based photoconductive optoelectronic detectorsApplied Physics Letters, 1989
- Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gasApplied Physics Letters, 1989
- Calibration of Ionization Gauge for Different GasesPhysical Review B, 1945