Characterization of RIE Induced Radiation Damage in Silicon Using Nondestructive Transverse Acoustoelectric Voltage Measurements
- 1 January 1984
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Silicon Schottky-barrier modification by ion-implantation damageIEEE Electron Device Letters, 1984
- Damage induced in Si by ion milling or reactive ion etchingJournal of Applied Physics, 1983
- Semiconductor surface characterization using transverse acoustoelectric voltage versus voltage measurementsJournal of Applied Physics, 1983
- Effect of neutral ion beam sputtering and etching on siliconThin Solid Films, 1982