Semiconductor surface characterization using transverse acoustoelectric voltage versus voltage measurements

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Abstract
An alternative to capacitance‐voltage (C‐V) measurement is experimentally demonstrated. This technique measures the transverse acoustoelectric voltage (TAV) as a function of applied dc voltage across the semiconductor. The technique is nondestructive and is applied to uniformly doped Si samples. Surface properties such as the flat‐band voltage, oxide charge, and the zero bias surface condition are determined.