Internal charge-phosphor field characteristics of alternating-current thin-film electroluminescent devices
- 15 February 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (7) , 744-746
- https://doi.org/10.1063/1.108860
Abstract
The internal charge versus phosphor field (Q–Fp) technique is proposed as a method for characterization of the electrical properties of alternating‐current thin‐film electroluminescent (ACTFEL) devices. Q–Fp analysis provides direct information about the internal behavior of the ACTFEL device. The steady‐state field and internal conduction, polarization, leakage, and relaxation charges may be readily deduced from a Q–Fp plot.Keywords
This publication has 8 references indexed in Scilit:
- Charge transfer in ZnS-type electroluminescence revisitedApplied Physics Letters, 1992
- Bulk deep traps in ZnS and their relation to high-field electroluminescenceSemiconductor Science and Technology, 1991
- Charge transfer in ZnS-type electroluminescenceJournal of Applied Physics, 1989
- Transferred Charge in the Active Layer and EL Device Characteristics of TFEL CellsJapanese Journal of Applied Physics, 1987
- Efficiency and Saturation in AC Thin Film EL StructuresPhysica Status Solidi (a), 1984
- Physical Concepts of High-Field, Thin-Film Electroluminescence DevicesPhysica Status Solidi (a), 1982
- Modeling a.c. thin-film electroluminescent devicesJournal of Luminescence, 1981
- Limitation imposed by field clamping on the efficiency of high-field ac electroluminescence in thin filmsJournal of Applied Physics, 1972