Formation of heavily doped n-type layers in GaAs by multiple ion implantation
- 1 March 1980
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (2) , 371-383
- https://doi.org/10.1007/bf02670855
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Control of zinc diffusivity in GaAs0.6P0.4by multiple implantationJournal of Applied Physics, 1977
- Enhancement of the donor activity of implanted selenium in GaAs by gallium implantationApplied Physics Letters, 1976
- Ga(AsP) light-emitting diode formed by ion implantationJournal of Applied Physics, 1973
- Ion implantation in compound semiconductors–an approach based on solid state theoryRadiation Effects, 1973
- Arsenic and Cadmium Implantations into n-Type Gallium ArsenideJournal of Applied Physics, 1971
- The Effects of Arsenic Ion Implantation in GaAsPublished by Springer Nature ,1971