Fowler-Nordheim tunneling in MIM structures with ultra-thin Al2O3 films
- 16 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 1 (1) , 189-192
- https://doi.org/10.1002/pssa.19700010122
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Investigation of Al2O3 film-thickness by tunnel emission and capacitance measurementsSolid State Communications, 1967
- New conduction and reversible memory phenomena in thin insulating filmsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1967
- Electron Tunneling between a Metal and a Semiconductor: Characteristics of Al-Al2O3-SnTe and −GeTe JunctionsJournal of Applied Physics, 1967
- Fowler-Nordheim tunneling in SiO2 filmsSolid State Communications, 1967
- Electron Barriers in Al-Al2O3-SnTe and Al-Al2O3-GeTe Tunnel JunctionsIBM Journal of Research and Development, 1966
- The effect of nonparabolic energy bands on tunneling through thin insulating filmsJournal of Physics and Chemistry of Solids, 1966
- Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al–Al2O3–Au DiodesJournal of Applied Physics, 1965
- Generalized Thermal J-V Characteristic for the Electric Tunnel EffectJournal of Applied Physics, 1964
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963
- The Formation of Metal Oxide Films Using Gaseous and Solid ElectrolytesJournal of the Electrochemical Society, 1963