Mobile fluoride ions in SiO2
- 1 February 1975
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (2) , 695-698
- https://doi.org/10.1063/1.321632
Abstract
We have obtained evidence that fluoride ions are mobile in SiO2 at room temperature. The outer surface of a thin layer of the oxide is coated with a fluoride salt and charged by a negative corona discharge in air. From shifts in the C−V curve and changes in the properties of trapping states near the interface we infer that negative ions have moved through the oxide. This is confirmed by an analysis with a secondary−ion mass spectrometer.This publication has 17 references indexed in Scilit:
- Determination of the sign of carrier transported across SiO2 films on SiApplied Physics Letters, 1974
- Injection and removal of ionic charge at room temperature through the interface of air with SiO2Journal of Applied Physics, 1973
- Laser-scanning photoemission measurements of the silicon-silicon dioxide interfaceJournal of Applied Physics, 1972
- Neutralization of Na+ Ions in ``HCl-Grown'' SiO2Applied Physics Letters, 1972
- Control of Positive Surface Charge in Si–SiO2 Interfaces by Use of Implanted Cs IonsApplied Physics Letters, 1971
- Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS StructuresJournal of the Electrochemical Society, 1971
- Ionic Contamination and Transport of Mobile Ions in MOS StructuresJournal of the Electrochemical Society, 1971
- Defects in crystalline quartz: Electron paramagnetic resonance of E' vacancy centers associated with germanium impuritiesJournal of Physics and Chemistry of Solids, 1970
- Proton and sodium transport in SiO2filmsIEEE Transactions on Electron Devices, 1967
- Observations on phosphorus stabilized SiO2filmsIEEE Transactions on Electron Devices, 1966