Control of Positive Surface Charge in Si–SiO2 Interfaces by Use of Implanted Cs Ions
- 1 December 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (11) , 478-479
- https://doi.org/10.1063/1.1653780
Abstract
Cs is shown to give positive surface charge, which has great stability against temperature‐bias stressing. Cs ions are first introduced into Si surfaces by ion implantation, then the surface layer is converted into SiO2 by thermal oxidation. Surface charge can be well localized by masking. Its magnitude depends on the number of implanted ions, on oxidation time, and temperature.Keywords
This publication has 3 references indexed in Scilit:
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- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965