The Effect of Hydrostatic Pressure on Defect Annealing in Semiconductors
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We report the first study of the effect of hydrostatic pressure on the annealing of defects in Si and GaAs. It is shown that the application of hydrostatic pressure enhances the annealing rate in these materials. Analysis of the data yields the lattice volume relaxation accompanying annealing.Keywords
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