On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling
- 1 December 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (12) , 1539-1544
- https://doi.org/10.1016/0038-1101(90)90134-z
Abstract
No abstract availableKeywords
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