Epitaxial Growth of High Quality ZnSe on GaAs Substrate by Atmospheric Pressure MOVPE Using Dimethylzinc and Hydrogen Selenide
- 1 May 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (5A) , L561
- https://doi.org/10.1143/jjap.26.l561
Abstract
Single crystalline layers of undoped ZnSe have been grown on GaAs substrates by atmospheric pressure MOVPE using dimethylzinc (DMZ) and hydrogen selenide (H2Se). Premature reactions typically encountered with this source combination can be eliminated completely, even at atmospheric pressure, by controlling the flow velocity of each source gas and the source gas mole ratio. For the first time, an excellent mirror surface morphology, as revealed by Nomarski interference microscopy, was obtained even for 8.2 µm thick epilayers grown at 300°C.Keywords
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